Title :
Innovations in special constructs for standard cell libraries in sub 28nm technologies
Author :
Rashed, Mazumder ; Jain, Nikhil ; Kim, Jung-Ho ; Tarabbia, M. ; Rahim, I. ; Ahmed, Shehab ; Kim, Jung-Ho ; Lin, Ike ; Chan, Shing-Chow ; Yoshida, Hiroyuki ; Beasor, S. ; Yuan, Lei ; Kye, J. ; Chee, J. ; Mittal, Anish ; Doman, D. ; Johnson, Stanley ; Schro
Author_Institution :
GLOBALFOUNDRIES, Sunnyvale, CA, USA
Abstract :
In this paper, we have presented the need for Middle of Line (MOL) Local Interconnects in a fixed layout shape called “Special Constructs” in order to make 20nm a very compelling technology for product migration from 28nm. These constructs are used to demonstrate considerable area, cost, and power/performance benefits by enabling efficient and manufacturable high density standard cell libraries. Also, these constructs have become an essential elements of optical lithography based advanced CMOS nodes for cost effective technology scaling even beyond 20nm.
Keywords :
CMOS integrated circuits; integrated circuit interconnections; integrated circuit layout; photolithography; CMOS nodes; MOL; fixed layout shape; middle of line local interconnects; optical lithography; power-performance benefits; product migration; size 20 nm; size 28 nm; special constructs; standard cell libraries; technology scaling; Computer architecture; Industries; Libraries; Logic gates; Metals; Silicon; Technological innovation;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724597
