Innovations in special constructs for standard cell libraries in sub 28nm technologies

Author

Rashed, Mazumder ; Jain, Nikhil ; Kim, Jung-Ho ; Tarabbia, M. ; Rahim, I. ; Ahmed, Shehab ; Kim, Jung-Ho ; Lin, Ike ; Chan, Shing-Chow ; Yoshida, Hiroyuki ; Beasor, S. ; Yuan, Lei ; Kye, J. ; Chee, J. ; Mittal, Anish ; Doman, D. ; Johnson, Stanley ; Schro

Author_Institution

GLOBALFOUNDRIES, Sunnyvale, CA, USA

fYear

2013

fDate

9-11 Dec. 2013

Abstract

In this paper, we have presented the need for Middle of Line (MOL) Local Interconnects in a fixed layout shape called “Special Constructs” in order to make 20nm a very compelling technology for product migration from 28nm. These constructs are used to demonstrate considerable area, cost, and power/performance benefits by enabling efficient and manufacturable high density standard cell libraries. Also, these constructs have become an essential elements of optical lithography based advanced CMOS nodes for cost effective technology scaling even beyond 20nm.

Keywords

CMOS integrated circuits; integrated circuit interconnections; integrated circuit layout; photolithography; CMOS nodes; MOL; fixed layout shape; middle of line local interconnects; optical lithography; power-performance benefits; product migration; size 20 nm; size 28 nm; special constructs; standard cell libraries; technology scaling; Computer architecture; Industries; Libraries; Logic gates; Metals; Silicon; Technological innovation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724597

Filename

6724597