DocumentCode :
3086779
Title :
Monte Carlo amorphous ion implantation possibility algorithm
Author :
Zhang, Jinyu ; Xiaokang, Shi ; Suzuki, Kunihiro ; Oka, Hideki
fYear :
2004
fDate :
15-16 March 2004
Firstpage :
302
Lastpage :
304
Abstract :
A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulation into amorphous Silicon material. The injection ion is split two virtual ions during each nuclear scattering with target atom. The virtual ions have different energy and weight which is different from other splitting scheme. The high energy virtual ion still runs but the rest position of the low energy virtual ion can be acquired by a pre-calculated database called LERPD (Low Energy Rest Position Database). About 3 orders statistic enhancement can be acquired compared with that of no splitting algorithm in almost the same CPU time.
Keywords :
Monte Carlo methods; doping profiles; energy loss of particles; ion implantation; possibility theory; semiconductor process modelling; silicon; MC-AIPA algorithm; Monte Carlo simulation; amorphous silicon; energy threshold; impurity profile; ion implantation simulation; low energy rest position database; nuclear scattering; scattering possibilities; splitting algorithm; splitting energy; statistic enhancement; virtual ions; Amorphous materials; Computational modeling; Databases; Ion implantation; Microelectronics; Monte Carlo methods; Research and development; Scattering; Tail; Tiles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
Type :
conf
DOI :
10.1109/IWJT.2004.1306863
Filename :
1306863
Link To Document :
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