Monte Carlo amorphous ion implantation possibility algorithm

Author

Zhang, Jinyu ; Xiaokang, Shi ; Suzuki, Kunihiro ; Oka, Hideki

fYear

2004

fDate

15-16 March 2004

Firstpage

302

Lastpage

304

Abstract

A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulation into amorphous Silicon material. The injection ion is split two virtual ions during each nuclear scattering with target atom. The virtual ions have different energy and weight which is different from other splitting scheme. The high energy virtual ion still runs but the rest position of the low energy virtual ion can be acquired by a pre-calculated database called LERPD (Low Energy Rest Position Database). About 3 orders statistic enhancement can be acquired compared with that of no splitting algorithm in almost the same CPU time.

Keywords

Monte Carlo methods; doping profiles; energy loss of particles; ion implantation; possibility theory; semiconductor process modelling; silicon; MC-AIPA algorithm; Monte Carlo simulation; amorphous silicon; energy threshold; impurity profile; ion implantation simulation; low energy rest position database; nuclear scattering; scattering possibilities; splitting algorithm; splitting energy; statistic enhancement; virtual ions; Amorphous materials; Computational modeling; Databases; Ion implantation; Microelectronics; Monte Carlo methods; Research and development; Scattering; Tail; Tiles;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306863

Filename

1306863