Title :
Two and three dimensional MOSFETs simulation with density gradient model
Author_Institution :
Bio-Nano Electron. Res. Centre, Toyo Univ., Saitama, Japan
Abstract :
A 2D and 3D density gradient model is described. Drain current characteristics taking quantum effects into consideration are simulated for extremely scaled bulk nMOSFETs with nanometer channel length and decananoscale tri-gate FinFETs.
Keywords :
MOSFET; carrier lifetime; hole density; hole mobility; impact ionisation; semiconductor device breakdown; semiconductor device models; 2D density gradient model; 3D density gradient model; decananoscale devices; device simulation; drain current characteristics; drift-diffusion approximation; electron current density; electron transport; hole density; hole transport; impact ionization generation; nanometer channel length; quantum effects; scaled bulk nMOSFET; short channel effects; threshold voltage; tri-gate FinFET; Current density; Electron mobility; Electrostatics; FinFETs; Impact ionization; MOSFETs; Nanoscale devices; Potential well; Quantum mechanics; Robustness;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306868
