Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator

Author

Du, Gang ; Liu, Xiaoyan ; Liu, Meng ; Sun, Lei ; Han, Ruqi

Author_Institution

Dept. of Microelectron., Peking Univ., Beijing, China

fYear

2004

fDate

15-16 March 2004

Firstpage

325

Lastpage

327

Abstract

A double-gate Schottky barrier tunneling transistor (DGSBTT) structure is investigated by a 2-D full-band Monte Carlo device simulator. A Schottky barrier contact model including tunneling effect and Schottky effect has been implemented in this simulator. The result shows that DGSBTF has a big performance improvement compare to single gate SBTT, its Ion/Ioff is more than 10⁵ at Vds= 1.0 V.

Keywords

MOSFET; Monte Carlo methods; Schottky barriers; conduction bands; electron-phonon interactions; impact ionisation; impurity scattering; semiconductor device models; surface scattering; tunnel transistors; valence bands; 2D full-band Monte Carlo device simulator; 2D potential distribution; Schottky barrier contact model; Schottky effect; conduction bands; double-gate Schottky barrier tunneling transistor; electron drift velocity; gate controllability; impact ionization scattering model; impurity scattering model; performance improvement; phonon scattering model; surface roughness scattering model; tunneling current; tunneling effect; valence bands; Controllability; Doping; Electrons; MOSFET circuits; Monte Carlo methods; Scattering; Semiconductor process modeling; Shape control; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306871

Filename

1306871