Title :
Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator
Author :
Du, Gang ; Liu, Xiaoyan ; Liu, Meng ; Sun, Lei ; Han, Ruqi
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing, China
Abstract :
A double-gate Schottky barrier tunneling transistor (DGSBTT) structure is investigated by a 2-D full-band Monte Carlo device simulator. A Schottky barrier contact model including tunneling effect and Schottky effect has been implemented in this simulator. The result shows that DGSBTF has a big performance improvement compare to single gate SBTT, its Ion/Ioff is more than 105 at Vds= 1.0 V.
Keywords :
MOSFET; Monte Carlo methods; Schottky barriers; conduction bands; electron-phonon interactions; impact ionisation; impurity scattering; semiconductor device models; surface scattering; tunnel transistors; valence bands; 2D full-band Monte Carlo device simulator; 2D potential distribution; Schottky barrier contact model; Schottky effect; conduction bands; double-gate Schottky barrier tunneling transistor; electron drift velocity; gate controllability; impact ionization scattering model; impurity scattering model; performance improvement; phonon scattering model; surface roughness scattering model; tunneling current; tunneling effect; valence bands; Controllability; Doping; Electrons; MOSFET circuits; Monte Carlo methods; Scattering; Semiconductor process modeling; Shape control; Silicon; Tunneling;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306871
