DocumentCode
3086978
Title
A flexible ultra-thin-body SOI single-photon avalanche diode
Author
Pengfei Sun ; Mimoun, B. ; Charbon, E. ; Ishihara, Ryoichi
Author_Institution
Delft Inst. of Microsyst. & Nanoelectron. (DIMES), Delft Univ. of Technol., Delft, Netherlands
fYear
2013
fDate
9-11 Dec. 2013
Abstract
The world´s first flexible ultra-thin-body SOI single-photon avalanche diode (SPAD) is reported with peak photon detection probability (PDP) at 11%, dark count rate (DCR) around 20kHz and negligible afterpulsing and cross-talk. It compares favorably with CMOS SPADs while it can be bended to 10mm-diameter and operate both in frontside-(FSI) and backside-illumination (BSI).
Keywords
avalanche photodiodes; crosstalk; photodetectors; silicon-on-insulator; BSI; CMOS SPAD; DCR; FSI; PDP; backside illumination; dark count rate; frontside illumination; photon detection probability; size 10 mm; ultra-thin-body SOI single photon avalanche diode; Biomedical imaging; Jitter; Performance evaluation; Polyimides; Silicon; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724606
Filename
6724606
Link To Document