DocumentCode
3087046
Title
The Micro-circuit Engineering in the Nonohmic Domain
Author
Tan, Michael L P ; Arora, Vijay K.
Author_Institution
Eng. Dept., Univ. of Cambridge, Cambridge
fYear
2009
fDate
25-27 March 2009
Firstpage
600
Lastpage
604
Abstract
Considering the breakdown of Ohm´s law in micro-circuits, the direct and differential (incremental) resistance is shown to rise dramatically in the regime where applied voltage V triggering the nonohmic behavior is larger than the critical voltage Vco = (Vt / lscro ) L, where Vt is the thermal voltage lscro, is the Ohmic mean free path, and L is the length of the conducting channel. This resistance blow-up becomes more pronounced for a smaller-length resistor in a circuit where two resistors of equal ohmic values are connected in a series or parallel configuration. The power consumed not only is reduced but also is a linear function of voltage as compared to quadratic behavior in the ohmic regime. These results are of immense value to circuit engineers and those doing device characterization to extract parasitic and contact transport parameters.
Keywords
electric resistance; integrated circuits; resistors; Ohm law; Ohmic mean free path; differential resistance; direct resistance; microcircuit engineering; nonohmic domain; resistor; thermal voltage; Breakdown voltage; Circuits; Computational modeling; Computer simulation; Conductivity; Resistors; Temperature; Thermal resistance; Turing machines; Virtual colonoscopy; Critical Voltage; Direct resistance; Micro-Circuit; Nonohmic; Ohm´s Law; Saturation velocity; differential (incremental) resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Modelling and Simulation, 2009. UKSIM '09. 11th International Conference on
Conference_Location
Cambridge
Print_ISBN
978-1-4244-3771-9
Electronic_ISBN
978-0-7695-3593-7
Type
conf
DOI
10.1109/UKSIM.2009.12
Filename
4809833
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