The impact of increased deformation potential at MOS interface on quasi-ballistic transport in ultrathin channel MOSFETs scaled down to sub-10 nm channel length

Author

Koba, Shun ; Ishida, Ryoya ; Kubota, Yuko ; Tsuchiya, Hideaki ; Kamakura, Yoshinari ; Mori, Nobuya ; Ogawa, Michiko

Author_Institution

Kobe Univ., Kobe, Japan

fYear

2013

fDate

9-11 Dec. 2013

Abstract

It is a common view that ballistic transport is enhanced due to channel length scaling because of decreased scattering number. In this study, based on Monte Carlo (MC) simulation technique, we have successfully extracted quasi-ballistic transport parameters such as backscattering coefficient, by carefully monitoring particle trajectories around the potential bottleneck point. We have found that contrary to expectations, ballistic transport in ultra-scaled double-gate (DG) MOSFETs is not enhanced mainly due to intensified surface roughness (SR) scattering if the channel length reduces less than 10 nm.

Keywords

MOSFET; Monte Carlo methods; backscatter; ballistic transport; electron mobility; surface roughness; MOS interface; Monte Carlo simulation technique; backscattering coefficient; channel length scaling; increased deformation potential; intensified surface roughness scattering; particle trajectories; quasiballistic transport; ultrascaled double gate MOSFET; ultrathin channel MOSFET; Backscatter; Ballistic transport; Electron mobility; MOSFET; Phonons; Scattering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724613

Filename

6724613