Title :
The impact of increased deformation potential at MOS interface on quasi-ballistic transport in ultrathin channel MOSFETs scaled down to sub-10 nm channel length
Author :
Koba, Shun ; Ishida, Ryoya ; Kubota, Yuko ; Tsuchiya, Hideaki ; Kamakura, Yoshinari ; Mori, Nobuya ; Ogawa, Michiko
Author_Institution :
Kobe Univ., Kobe, Japan
Abstract :
It is a common view that ballistic transport is enhanced due to channel length scaling because of decreased scattering number. In this study, based on Monte Carlo (MC) simulation technique, we have successfully extracted quasi-ballistic transport parameters such as backscattering coefficient, by carefully monitoring particle trajectories around the potential bottleneck point. We have found that contrary to expectations, ballistic transport in ultra-scaled double-gate (DG) MOSFETs is not enhanced mainly due to intensified surface roughness (SR) scattering if the channel length reduces less than 10 nm.
Keywords :
MOSFET; Monte Carlo methods; backscatter; ballistic transport; electron mobility; surface roughness; MOS interface; Monte Carlo simulation technique; backscattering coefficient; channel length scaling; increased deformation potential; intensified surface roughness scattering; particle trajectories; quasiballistic transport; ultrascaled double gate MOSFET; ultrathin channel MOSFET; Backscatter; Ballistic transport; Electron mobility; MOSFET; Phonons; Scattering; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724613
