• DocumentCode
    3087239
  • Title

    High temperature power electronic module packaging

  • Author

    Ang, Simon S. ; Hao Zhang

  • Author_Institution
    High Density Electron. Center, Univ. of Arkansas, Fayetteville, AR, USA
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Advances in wide band-gap semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) offer many high temperature electronic applications. However, current packaging technologies hinder taking full advantages of the high temperature capabilities offered by these devices. This paper discusses the material and fabrication issues and technologies for high temperature packaging.
  • Keywords
    III-V semiconductors; gallium compounds; power electronics; semiconductor device packaging; silicon compounds; wide band gap semiconductors; GaN; SiC; gallium nitride; high temperature packaging; power electronic module packaging; silicon carbide; wide band-gap semiconductor devices; Electronic packaging thermal management; Encapsulation; Reliability; Substrates; Thermal management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153443
  • Filename
    7153443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3087239