Title :
High temperature power electronic module packaging
Author :
Ang, Simon S. ; Hao Zhang
Author_Institution :
High Density Electron. Center, Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
Advances in wide band-gap semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) offer many high temperature electronic applications. However, current packaging technologies hinder taking full advantages of the high temperature capabilities offered by these devices. This paper discusses the material and fabrication issues and technologies for high temperature packaging.
Keywords :
III-V semiconductors; gallium compounds; power electronics; semiconductor device packaging; silicon compounds; wide band gap semiconductors; GaN; SiC; gallium nitride; high temperature packaging; power electronic module packaging; silicon carbide; wide band-gap semiconductor devices; Electronic packaging thermal management; Encapsulation; Reliability; Substrates; Thermal management;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153443
