DocumentCode
3087360
Title
Uniformity impact on the upstream Electromigration of 40nm low-k Cu interconnect
Author
Xiangfu Zhao ; Atman Zhao
Author_Institution
Semicond. Manuf. Int. Corp., Shanghai, China
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
2
Abstract
Uniformity impact of metal and via on upstream Electromigration (EM) was investigated in Cu interconnect based on 40nm technology node. It is found that EM time-to-failure (TTF) log-normal main distribution can be improved by better metal uniformity. It is also observed that EM performance can be greatly enhanced by improving via and metal uniformity with NFC pull back recipe.
Keywords
copper; electromigration; integrated circuit interconnections; log normal distribution; Cu; NFC pull back recipe; TTF; log-normal main distribution; low-k Cu interconnect; metal uniformity; size 40 nm; time-to-failure; uniformity impact; upstream electromigration; Copper; Electromigration; Joints; Log-normal distribution; Reliability; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153448
Filename
7153448
Link To Document