Title :
Uniformity impact on the upstream Electromigration of 40nm low-k Cu interconnect
Author :
Xiangfu Zhao ; Atman Zhao
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
Uniformity impact of metal and via on upstream Electromigration (EM) was investigated in Cu interconnect based on 40nm technology node. It is found that EM time-to-failure (TTF) log-normal main distribution can be improved by better metal uniformity. It is also observed that EM performance can be greatly enhanced by improving via and metal uniformity with NFC pull back recipe.
Keywords :
copper; electromigration; integrated circuit interconnections; log normal distribution; Cu; NFC pull back recipe; TTF; log-normal main distribution; low-k Cu interconnect; metal uniformity; size 40 nm; time-to-failure; uniformity impact; upstream electromigration; Copper; Electromigration; Joints; Log-normal distribution; Reliability; Stress;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153448
