Title :
Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
Author :
Paul, A. ; Bryant, A. ; Hook, T.B. ; Yeh, C.C. ; Kamineni, V. ; Johnson, J.B. ; Tripathi, N. ; Yamashita, Takayoshi ; Tsutsui, G. ; Basker, V. ; Standaert, Theodorus E. ; Faltermeier, J. ; Haran, B.S. ; Kanakasabapathy, S. ; Bu, Hongxia ; Cho, Jeon-Wook ;
Author_Institution :
Global Foundries Inc. Technol. Res., IBM Res., Albany, NY, USA
Abstract :
A first time rigorous experimental study of effective current (Ieff) variability in high-volume manufacturable (HVM) 14nm Silicon-On-Insulator (SOI) FINFETs is reported which identifies, threshold voltage (Vtlin), external resistance (Rext), and channel trans-conductance (Gm) as three independent sources of variation. The variability in Gm, Vtlin (AVT=1.4(n)/0.7(p) mV-μm), and Ieff exhibit a linear Pelgrom fit indicating local variations, along with non-zero intercept which suggests the presence of global variations at the wafer level. Relative contribution of Gm to Ieff variability is dominant in FINFETs with small number of fins (Nfin); however, both Gm and Rext variations dominate in large Nfin devices. Relative contribution of Vtlin remains almost independent of Nfin. Both n and p FINFETs show the above mentioned trends.
Keywords :
MOSFET; semiconductor technology; silicon-on-insulator; MOSFET parameter correlations; Si; channel transconductance; effective current variability; external resistance; linear Pelgrom fit; local variations; multifin SOI FINFET; nonzero intercept; silicon on insulator; size 14 nm; threshold voltage; wafer level; Correlation; Electric variables measurement; FinFETs; Resistance; Sensitivity; Very large scale integration;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724625
