DocumentCode :
3087520
Title :
A novel skin-effect based surface impedance model for accurate broadband characterization of interconnects with method of moments
Author :
Al-Qedra, Mohammed A I ; Okhmatovski, Vladimir I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Manitoba, Winnipeg, MB, Canada
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
700
Lastpage :
703
Abstract :
An accurate broadband surface integral equation formulation for interconnect-type problems is obtained from the volumetric integral equation. The three-dimensional volumetric current density inside the interconnect is expressed as a product of unknown vector surface current density at the conductor boundary times the known exponential factor describing the skin-effect attenuation of the current off the conductor surface. The enforcement of known current dependence along the coordinate normal to conductor surface allows for reduction of governing volumetric integral equation formulation to the surface electric field integral equation (EFIE) superposed with an appropriate surface impedance operator. The model is implemented in conjunction with RWG method of moments discretization of resultant surface EFIE and is shown to provide accurate extraction of network parameters from dc to microwaves.
Keywords :
inductors; integral equations; interconnections; method of moments; surface impedance; broadband surface integral equation formulation; conductor surface; interconnect-type problems; method of moments; skin-effect attenuation; skin-effect based surface impedance model; surface electric field integral equation; surface impedance operator; three-dimensional volumetric current density; vector surface current density; volumetric integral equation; Conductors; Current density; Dielectric substrates; Frequency; Integral equations; Kernel; Moment methods; Skin effect; Surface impedance; Wires; Integral equation; method of moments; skin-effect; surface impedance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5514839
Filename :
5514839
Link To Document :
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