Title :
A novel side-gated ultrathin-channel nanopore FET (SGNAFET) sensor for direct DNA sequencing
Author :
Yanagi, Itaru ; Oura, Takeshi ; Haga, Tatsuya ; Ando, Makoto ; Yamamoto, Jun ; Mine, Tsunenori ; Ishida, Tomoyuki ; Hatano, Tomomi ; Akahori, Rena ; Yokoi, Takahide ; Anazawa, Takao ; Goto, Yasunori
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
A novel side-gated ultrathin-channel nanopore FET (SGNAFET), for fast and label-free DNA sequencing with high resolution and sensitivity, is proposed. The goal of the SGNAFET is to identify the four types of nucleotides in DNA by changes in the channel current of the SGNAFET. Aiming to reach that goal, a SGNAFET with channel thickness (tch.) of 2 or 4 nm was successfully operated and could detect DNA translocations through its nanopore on the basis of changes in its channel current.
Keywords :
DNA; field effect transistors; nanoporous materials; SGNAFET sensor; channel current; channel thickness; direct DNA sequencing; nucleotides; side gated ultrathin channel nanopore FET; size 2 nm; size 4 nm; Annealing; Current measurement; DNA; Electrodes; Field effect transistors; Nanobioscience; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724629
