• DocumentCode
    3087544
  • Title

    A novel side-gated ultrathin-channel nanopore FET (SGNAFET) sensor for direct DNA sequencing

  • Author

    Yanagi, Itaru ; Oura, Takeshi ; Haga, Tatsuya ; Ando, Makoto ; Yamamoto, Jun ; Mine, Tsunenori ; Ishida, Tomoyuki ; Hatano, Tomomi ; Akahori, Rena ; Yokoi, Takahide ; Anazawa, Takao ; Goto, Yasunori

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    A novel side-gated ultrathin-channel nanopore FET (SGNAFET), for fast and label-free DNA sequencing with high resolution and sensitivity, is proposed. The goal of the SGNAFET is to identify the four types of nucleotides in DNA by changes in the channel current of the SGNAFET. Aiming to reach that goal, a SGNAFET with channel thickness (tch.) of 2 or 4 nm was successfully operated and could detect DNA translocations through its nanopore on the basis of changes in its channel current.
  • Keywords
    DNA; field effect transistors; nanoporous materials; SGNAFET sensor; channel current; channel thickness; direct DNA sequencing; nucleotides; side gated ultrathin channel nanopore FET; size 2 nm; size 4 nm; Annealing; Current measurement; DNA; Electrodes; Field effect transistors; Nanobioscience; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724629
  • Filename
    6724629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3087544