DocumentCode
3087733
Title
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
Author
Grasser, Tibor ; Rott, Karsten ; Reisinger, H. ; Waltl, M. ; Wagner, Paul ; Schanovsky, Franz ; Goes, W. ; Pobegen, Gregor ; Kaczer, Ben
Author_Institution
Tech. Univ. Wien, Vienna, Austria
fYear
2013
fDate
9-11 Dec. 2013
Abstract
The recently suggested time-dependent defect spectroscopy (TDDS) has allowed us to study the recoverable component of NBTI at the single-defect level. To go beyond our previous efforts, we have performed a long-term TDDS study covering also the kilo-second time window. We found that even in this extended window NBTI recovery is due to a collection of first-order reactions. In particular, there is no trace of a diffusion-limited process as assumed in the reaction-diffusion model. Most intriguingly, the responsible traps show various degrees of volatility, that is, they can disappear and reappear. Our observations lend strong support to the idea that the recoverable component of NBTI is due to hydrogen-related defects which are active when a hydrogen atom is at the defect site and inactive when not.
Keywords
hydrogen; negative bias temperature instability; semiconductor device reliability; H; NBTI; hydrogen atom; hydrogen-related volatile defects; reaction-diffusion model; single-defect level; time-dependent defect spectroscopy; Estimation; Hydrogen; Kinetic theory; Spectroscopy; Stress; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724637
Filename
6724637
Link To Document