• DocumentCode
    3087733
  • Title

    Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI

  • Author

    Grasser, Tibor ; Rott, Karsten ; Reisinger, H. ; Waltl, M. ; Wagner, Paul ; Schanovsky, Franz ; Goes, W. ; Pobegen, Gregor ; Kaczer, Ben

  • Author_Institution
    Tech. Univ. Wien, Vienna, Austria
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    The recently suggested time-dependent defect spectroscopy (TDDS) has allowed us to study the recoverable component of NBTI at the single-defect level. To go beyond our previous efforts, we have performed a long-term TDDS study covering also the kilo-second time window. We found that even in this extended window NBTI recovery is due to a collection of first-order reactions. In particular, there is no trace of a diffusion-limited process as assumed in the reaction-diffusion model. Most intriguingly, the responsible traps show various degrees of volatility, that is, they can disappear and reappear. Our observations lend strong support to the idea that the recoverable component of NBTI is due to hydrogen-related defects which are active when a hydrogen atom is at the defect site and inactive when not.
  • Keywords
    hydrogen; negative bias temperature instability; semiconductor device reliability; H; NBTI; hydrogen atom; hydrogen-related volatile defects; reaction-diffusion model; single-defect level; time-dependent defect spectroscopy; Estimation; Hydrogen; Kinetic theory; Spectroscopy; Stress; Temperature distribution; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724637
  • Filename
    6724637