Negative bias temperature instability lifetime prediction: Problems and solutions

Lifetime of pMOSFETs is limited by NBTI. Conventional slow measurement overestimates lifetime due to recovery. The fast techniques suppress recovery, but cannot give reliable prediction. This work proposes a new lifetime prediction technique that overcomes the shortcomings of both slow and fast methods, based on the As-grown-Generation (AG) model. Its advantages over those based on Reaction-Diffusion (RD) and two-stage models include its simple algorithm, only two fitting parameters at a given temperature, and no need for a kinetic model for the as-grown hole traps. This makes it readily implementable in industrial laboratories for process screening.