The optimization of the high-temperature heat source for a MOCVD vacuum reactor

Author

Hsien-Chih Chiu ; Chih-Kai Hu ; Hung-I Chien ; Li, Tomi T. ; Pi-Chen

Author_Institution

Dept. of Mech. Eng., Nat. Central Univ., Taoyuan, Taiwan

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

Semiconductor equipment usually can be divided into five sub-system modules, (a) heating system, (b) exhausting system, (c) injecting system, (d) power control and (e) vacuum chamber. Metal organic chemical vapor deposition (MOCVD) process is the key process to deposit epitaxy thin film, and the uniformity is determined by the distribution of susceptor temperature. This research focuses on the development of high temperature heat source. The finite element software helps to develop the best results about the optimized geometry of the heater, the thickness of the susceptor, and the distance between the heater and susceptor. Furthermore, the optimum geometry of heater is received by numerical analysis combined with power controller. Compare with the experiment, the confidence level of software is 92%.

Keywords

III-V semiconductors; MOCVD; exhaust systems; finite element analysis; gallium compounds; heating; power control; semiconductor thin films; wide band gap semiconductors; GaN; MOCVD vacuum reactor; epitaxy thin film; exhausting system; finite element software; heater optimized geometry; heating system; high-temperature heat source; injecting system; metal organic chemical vapor deposition; power control; semiconductor equipment; sub-system modules; susceptor temperature; susceptor thickness; vacuum chamber; Heating; Inductors; MOCVD;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153475

Filename

7153475