Title :
Challenges toward millimeter-wave CMOS circuits enhanced by design techniques
Author_Institution :
Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
This paper presents several design techniques for enhancing both active and passive device characteristics without any process modification, especially in the millimeter-wave frequency range. A 60-GHz 20-Gb/s wireless transceiver employing the techniques is also demonstrated in 65-nm CMOS.
Keywords :
CMOS integrated circuits; integrated circuit design; millimetre wave integrated circuits; radio transceivers; active device characteristics; bit rate 20 Gbit/s; design techniques; frequency 60 GHz; millimeter-wave CMOS circuits; millimeter-wave frequency range; passive device characteristics; process modification; size 65 nm; wireless transceiver; Gain; Layout; Logic gates; Millimeter wave transistors; Wireless communication;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724649
