DocumentCode :
3088102
Title :
A novel 850-nm surface-emitting LED with 131-nm spectral width
Author :
Nettelbladt, H.K. ; Widman, M.K.
Author_Institution :
ABB HAFO Optoelectron. Div., Jarfalla, Sweden
fYear :
1992
fDate :
18-20 May 1992
Firstpage :
399
Lastpage :
405
Abstract :
Large bandwidth infrared light emitting diodes (LEDs) were fabricated by liquid-phase epitaxy. The spectral bandwidth is a maximum of 131 nm at room temperature (754-885 nm). Normally, the bandwidth of a 850-nm LED is 60 nm. The mean spectral bandwidth of the new LEDs is 110 nm at room temperature, 99 nm at -55°C, and 120 nm at +125°C. The optical power coupled through a 100-m 100-μm-core-diameter optical fiber with NA=0.29 is typically -3 dBm. The power decrease by change of temperature is 3%/°C. Initial results from an accelerated endurance test are presented. The characteristics of the new large bandwidth LED show good stability over a temperature range of -55 to +125°C, which makes it suitable for wavelength division multiplex applications in aircraft and space systems
Keywords :
light emitting diodes; liquid phase epitaxial growth; optical communication equipment; reliability; wavelength division multiplexing; -55 to 125 degC; 850 nm; IR LED; LPE fabrication; WDM applications; accelerated endurance test; infrared light emitting diodes; large spectral bandwidth; liquid-phase epitaxy; stability; surface-emitting LED; wavelength division multiplex; Bandwidth; Epitaxial growth; Life estimation; Light emitting diodes; Optical coupling; Optical fibers; Optical surface waves; Stability; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1992. Proceedings., 42nd
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0167-6
Type :
conf
DOI :
10.1109/ECTC.1992.204239
Filename :
204239
Link To Document :
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