Title :
Scalable sensing of interconnect current with magnetic tunnel junctions embedded in Cu interconnects
Author :
Takenaga, Takashi ; Tsuzaki, Yoshiharu ; Furukawa, Toshihiro ; Yoshida, Chikako ; Yamazaki, Yasuyuki ; Hatada, Akiyoshi ; Nakabayashi, Masaaki ; Iba, Yoshihisa ; Takahashi, Asami ; Noshiro, Hideyuki ; Tsunoda, Koji ; Aoki, Masaki ; Fukumoto, H. ; Sugii, T
Author_Institution :
Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
Abstract :
A current sensor that can be integrated in back-end-of-line in the CMOS process with MTJs is proposed and evaluated. We demonstrated current sensing in Cu wires of widths of 0.24 to 2.4 μm and obtained a sensitivity of up to 4.2%/mA. Moreover, we confirmed that the combination of smaller MTJs and finer wires can suppress the effects of environmental magnetic fields.
Keywords :
CMOS integrated circuits; copper; electric current measurement; integrated circuit interconnections; magnetic fields; magnetic tunnelling; CMOS; Cu; Cu interconnects; back-end-of-line; current sensor; interconnect current scalable sensing; magnetic fields; magnetic tunnel junctions; size 0.24 mum to 2.4 mum; Integrated circuit interconnections; Magnetic fields; Magnetic tunneling; Resistance; Sensitivity; Sensors; Wires;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724655
