Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor

Author

Hua-Min Li ; Dae-Yeong Lee ; Min-Sup Choi ; De-Shun Qu ; Xiao-Chi Liu ; Chang-Ho Ra ; Won Jong Yoo

Author_Institution

Samsung-SKKU Graphene Center (SSGC), SKKU Adv. Inst. of Nano Technol. (St.) Sungkyunkwan Univ., Suwon, South Korea

fYear

2013

fDate

9-11 Dec. 2013

Abstract

An ultrahigh photocurrent (PC) signal which was about thousand times higher compared to the corresponding dark current was achieved in a two-dimensional (2D) multi-layer MoS₂ field effect transistor (FET), owing to a gate-controlled MoS₂/Ti/Au Schottky barrier (SB) modulation. The SBs can be enlarged for suppressing the electron drift along the channel in dark environment, and be reduced for the collection of photo-excited charge carriers in illuminating environment, providing the great potential for 2D electronic and optoelectronic applications.

Keywords

Schottky barriers; field effect transistors; gold; molybdenum compounds; photoconductivity; photoemission; titanium; 2D electronic applications; 2D-FET; MoS₂-Ti-Au; PC signal; SB modulation; dark current; electron drift suppression; field effect transistor; gate-controlled Schottky barrier modulation; illuminating environment; optoelectronic applications; photoexcited charge carrier collection; superior photoresponse; two-dimensional multilayer field effect transistor; ultrahigh photocurrent signal; Dark current; Field effect transistors; Gold; Graphene; Lasers; Logic gates; Modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724662

Filename

6724662