Title :
Statistical Analysis of Flash Memory Read Data
Author :
Moon, Jaekyun ; No, Jaehyeong ; Lee, Sangchul ; Kim, Sangsik ; Yang, Joongseop
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
This paper discusses a technique for analyzing real data from flash memory cells. The goal is to identify and isolate various sources that cause the shifts and variations of the read values with respect to the intended write values. The analysis reveals how the neighboring cells interfere with the victim cell. Using the proposed analysis technique, the contribution of a specified set of neighboring cells towards the random read variation of the victim cell can be also quantified accurately.
Keywords :
data analysis; flash memories; statistical analysis; flash memory read data analysis; neighboring cells; random read variation; statistical analysis; Ash; Erbium; IEEE Communications Society; Interference; Noise; Random access memory; Training;
Conference_Titel :
Global Telecommunications Conference (GLOBECOM 2011), 2011 IEEE
Conference_Location :
Houston, TX, USA
Print_ISBN :
978-1-4244-9266-4
Electronic_ISBN :
1930-529X
DOI :
10.1109/GLOCOM.2011.6134563