• DocumentCode
    3088354
  • Title

    High-performance multi-stage graphene RF receiver integrated circuit

  • Author

    Shu-Jen Han ; Valdes Garcia, A. ; Oida, Soushi ; Jenkins, Keith A. ; Haensch, Wilfried

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    With the rapid advances in graphene field-effect transistor (GFET) performances, graphene has attracted much interest as a future channel material in RF electronics. However, the pace of the development of graphene circuits seems significantly slower. Several graphene circuits demonstrated today showing promising GHz functions still relied on ideal discrete passive components connected at the equipment level, and these circuits are limited to single transistor designs [1-3]. To compete with existing technologies requires that all active and passive components be monolithically integrated for not only the small circuit footprint and low cost but also high circuit complexity and advanced system functionality.
  • Keywords
    circuit complexity; field effect transistors; graphene; radiofrequency integrated circuits; C; GFET; RF electronics; active components; channel material; circuit complexity; circuit footprint; discrete passive components; graphene field-effect transistor; integrated circuit; multistage graphene RF receiver; single transistor designs; Gain; Graphene; Integrated circuits; Logic gates; Radio frequency; Receivers; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724665
  • Filename
    6724665