Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

Author

Witters, L. ; Mitard, J. ; Loo, Roger ; Eneman, Geert ; Mertens, Hans ; Brunco, D.P. ; Lee, S.H. ; Waldron, Niamh ; Hikavyy, Andriy ; Favia, Paola ; Milenin, A.P. ; Shimura, Y. ; Vrancken, C. ; Bender, Hugo ; Horiguchi, Naoto ; Barla, Kathy ; Thean, A. ;

Author_Institution

IMEC, Leuven, Belgium

fYear

2013

fDate

9-11 Dec. 2013

Abstract

Strained Ge p-channel FinFETs on Strain Relaxed SiGe are reported for the first time, demonstrating peak transconductance gm_SAT of 1.3mS/μm at V_DS=-0.5V and good short channel control down to 60nm gate length. Optimization of P-doping in the SiGe, optimized Si cap passivation thickness on the Ge, and improved gate wrap of the channel all improve device characteristics. The Ge FinFETs presented in this work outperform published relaxed Ge FinFET devices for the gm_SAT/SS_SAT benchmarking metric.

Keywords

Ge-Si alloys; MOSFET; buffer layers; passivation; phosphorus; quantum well devices; semiconductor doping; P-doping; SiGe:P; cap passivation thickness; p-channel FinFET; quantum well pMOS FinFET; replacement fin process; short channel control; size 60 nm; strain relaxed buffer layers; voltage -0.5 V; FinFETs; Logic gates; Optimization; Silicon; Silicon germanium; Standards; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724669

Filename

6724669