• DocumentCode
    3088478
  • Title

    Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs

  • Author

    Sasaki, Yutaka ; Godet, L. ; Chiarella, T. ; Brunco, D.P. ; Rockwell, T. ; Lee, Jae W. ; Colombeau, B. ; Togo, Mitsuhiro ; Chew, Soon Aik ; Zschaetszch, G. ; Noh, K.B. ; De Keersgieter, An ; Boccardi, Guillaume ; Kim, Myung Su ; Hellings, Geert ; Martin,

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    We demonstrate a novel photoresist-compatible FinFET doping technique that combines the advantages of deposition and implantation. Energy and deposition thickness optimization for the Ion Assisted Deposition and Doping (IADD) process provides excellent doping of nMOS extensions, thus reducing external resistance REXT. On current ION is improved by 6-8% for LG of 26-30 nm and by 15% for LG of 20 nm, with better SCE and DIBL.
  • Keywords
    MOSFET; arsenic compounds; elemental semiconductors; ion implantation; photoresists; semiconductor doping; AsH3; Si; Si bulk FinFET; external resistance; implantation; ion assisted deposition; nMOS extensions; photoresist-compatible FinFET; scaled NMOS; sidewall doping; Doping; FinFETs; Implants; Resistance; Resists; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724671
  • Filename
    6724671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3088478