Design of precision capacitors for analog applications

Author

Onge, S. A St ; Franz, S.G. ; Puttlitz, A.F. ; Kalinoski, A. ; Johnson, B.E. ; El-Kareh, B.

Author_Institution

IBM Technol. Products, Essex Junction, VT, USA

fYear

1992

fDate

18-20 May 1992

Firstpage

583

Lastpage

590

Abstract

The authors describe and analyze two capacitors which are incorporated in a baseline BiCMOS technology without added process complexity. The first capacitor is formed between degenerated doped polysilicon and silicon. The second is formed between two degenerately doped polysilicon layers. In both structures, the insulator is a deposited or grown oxide. The sensitivity of the capacitor voltage coefficient to oxide thickness and surface dopant concentration is discussed theoretically and compared to measured data. The two capacitors are optimized to exhibit very low voltage coefficients

Keywords

BiCMOS integrated circuits; analogue processing circuits; analogue-digital conversion; capacitors; integrated circuit technology; metal-insulator-semiconductor devices; BiCMOS technology; SiO₂ insulator; analog applications; capacitor stability; degenerated doped polysilicon; oxide thickness; precision capacitance ratio; precision capacitors; surface dopant concentration; temperature coefficient; voltage coefficient; Analog-digital conversion; BiCMOS integrated circuits; CMOS technology; Capacitance; Dielectrics; Insulation; Low voltage; MOS capacitors; Silicon on insulator technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1992. Proceedings., 42nd

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0167-6

Type

conf

DOI

10.1109/ECTC.1992.204262

Filename

204262