Title :
Design of precision capacitors for analog applications
Author :
Onge, S. A St ; Franz, S.G. ; Puttlitz, A.F. ; Kalinoski, A. ; Johnson, B.E. ; El-Kareh, B.
Author_Institution :
IBM Technol. Products, Essex Junction, VT, USA
Abstract :
The authors describe and analyze two capacitors which are incorporated in a baseline BiCMOS technology without added process complexity. The first capacitor is formed between degenerated doped polysilicon and silicon. The second is formed between two degenerately doped polysilicon layers. In both structures, the insulator is a deposited or grown oxide. The sensitivity of the capacitor voltage coefficient to oxide thickness and surface dopant concentration is discussed theoretically and compared to measured data. The two capacitors are optimized to exhibit very low voltage coefficients
Keywords :
BiCMOS integrated circuits; analogue processing circuits; analogue-digital conversion; capacitors; integrated circuit technology; metal-insulator-semiconductor devices; BiCMOS technology; SiO2 insulator; analog applications; capacitor stability; degenerated doped polysilicon; oxide thickness; precision capacitance ratio; precision capacitors; surface dopant concentration; temperature coefficient; voltage coefficient; Analog-digital conversion; BiCMOS integrated circuits; CMOS technology; Capacitance; Dielectrics; Insulation; Low voltage; MOS capacitors; Silicon on insulator technology; Temperature;
Conference_Titel :
Electronic Components and Technology Conference, 1992. Proceedings., 42nd
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0167-6
DOI :
10.1109/ECTC.1992.204262
