Title :
Steady-state and transient C-V response of a high-voltage nonlinear barium titanate ceramic-disc power-snubber capacitor
Author :
Campbell, C.K. ; van Wyk, J.D. ; Holm, M.F.K. ; Prinsloo, J.J.R. ; Schoeman, J.J.
Author_Institution :
Rand Afrikaans Univ., Johannesburg, South Africa
Abstract :
Observations are reported on the steady-state and transient capacitance-voltage (C-V) response of barium titanate (BaTiO3) nonlinear ceramic-disk capacitors with breakdown voltages above 1500 V, fabricated for use in power electronic dissipative resistance-capacitance-diode (RCD) snubbers to reduce the stored-energy requirement. This includes the in situ C-V snubber performance in a 1000 V bipolar junction transistor switch test circuit. The considerable difference between the room-temperature C-V response in a conventional AC test bridge and that in a novel 1500 V quasi-DC charge/discharge hysteresis test circuit is explained in terms of an equivalent circuit model derived for such nonlinear ceramic-disk capacitors
Keywords :
barium compounds; bipolar transistors; overvoltage protection; power capacitors; power electronics; power transistors; 1 to 1.5 kV; BaTiO3; HV capacitors; RCD snubbers; bipolar junction transistor switch test circuit; breakdown voltages; ceramic-disc power-snubber capacitor; ceramic-disk capacitors; equivalent circuit model; hysteresis test circuit; nonlinear capacitors; resistance capacitance diode snubbers; room-temperature C-V response; snubber performance; steady state C-V response; stored-energy requirement; transient C-V response; Barium; Bipolar transistor circuits; Capacitance-voltage characteristics; Capacitors; Circuit testing; Power electronics; Snubbers; Steady-state; Switches; Titanium compounds;
Conference_Titel :
Electronic Components and Technology Conference, 1992. Proceedings., 42nd
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0167-6
DOI :
10.1109/ECTC.1992.204265
