Title :
Conductive-AFM tomography for 3D filament observation in resistive switching devices
Author :
Celano, U. ; Goux, L. ; Belmonte, A. ; Schulze, A. ; Opsomer, K. ; Detavernier, C. ; Richard, O. ; Bender, Hugo ; Jurczak, Malgorzata ; Vandervorst, W.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
In this paper we demonstrate a novel characterization technique for the observation of the conductive filament in conductive bridging memory devices (CBRAM). The conductive filament is observed for a scaled memory element programmed under 10μA operative current. After the electrical programing, the C-AFM tomography enables the 3D analysis of the conductive filament within the switching layer.
Keywords :
atomic force microscopy; random-access storage; three-dimensional integrated circuits; tomography; 3D analysis; 3D filament observation; C-AFM tomography; CBRAM; conductive bridging memory devices; conductive-AFM tomography; current 10 muA; resistive switching devices; scaled memory element; switching layer; Aluminum oxide; Electrodes; Materials; Shape; Switches; Three-dimensional displays; Tomography;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724679
