Unified reliability modeling of Ge-rich phase change memory for embedded applications

Phase change memory (PCM) is one of the most attractive solutions for embedded applications, thanks to the low cost of integration with the CMOS front-end and good scaling behavior. Embedded PCM (ePCM) must feature high-temperature stability during operation and solder bonding [1]. This work addresses reliability of PCM based on Ge-rich GeSbTe [2]. We evidence resistance drift and decay in the set state for the first time, which is attributed to grain-boundary relaxation and grain growth. A unified model is presented, capable of predicting the reliability of set/reset states at elevated temperature T.