Connecting the physical and electrical properties of Hafnia-based RRAM

Simulations of the dynamic physical processes involved in HfO₂-based resistive-memory-operations are used to identify the dielectric structural properties responsible for device performance, while revealing that repeatable switching and higher HRS resistances are enabled by the oxide sub-stoichiometric composition. These simulations support a conductive-filament-formation physical model which is resulted from metal-oxygen bond breakage and subsequent oxygen ion out-diffusion, thus leaving behind an oxygen-vacancy rich region. The subsequent reset process is also shown to be controlled by re-oxidation of the filament tip.