Theoretical Study of The Charge Control in AlGaN/GaN HEMTs

Author

Aziz, M.A. ; El-Abd, Ali

Author_Institution

Alexandria Higher Inst. of Technol.

Volume

0

fYear

2006

fDate

14-16 March 2006

Firstpage

1

Lastpage

7

Abstract

This paper presents a simplified numerical model for the charge control in AlGaN/GaN high electron mobility transistor (HEMT). The model is based on solution of Poisson´s equation in the AlGaN layer, including the effect of spontaneous and piezoelectric polarizations. A non-linear formulation of the strain-induced polarization fields has been considered. The model results indicate a close agreement with other complicated models. Theoretical study of the effects of structural and processing parameters on the charge control has been presented. The examined parameters are: the AlGaN barrier layer thickness and doping, the spacer layer thickness, and the Al mole fraction x. Completely different effects for some parameters have been detected and explained

Keywords

III-V semiconductors; Poisson equation; aluminium compounds; gallium compounds; high electron mobility transistors; piezoelectricity; semiconductor device models; semiconductor doping; AlGaN-GaN; HEMT; Poisson equation; charge control; doping; high electron mobility transistor; nonlinear formulation; piezoelectric polarization; processing parameter; spacer layer thickness; spontaneous polarization; strain-induced polarization field; structural parameter; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Photonic band gap; Piezoelectric polarization; Poisson equations; Semiconductor process modeling; Telecommunication control;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 2006. NRSC 2006. Proceedings of the Twenty Third National

Conference_Location

Menoufiya

Print_ISBN

977-5031-84-2

Electronic_ISBN

977-5031-84-2

Type

conf

DOI

10.1109/NRSC.2006.386378

Filename

4275175