FDSOI nanowires: An opportunity for hybrid circuit with field effect and single electron transistors

Author

Vinet, M. ; Deshpande, V. ; Jehl, Xavier ; Wacquez, R. ; Barraud, S. ; Sanquer, Marc ; Coquand, R. ; Cueto, O. ; Roche, B. ; Voisin, B. ; Pierre, Magali ; Grenouillet, L. ; Vizioz, C. ; Tosti, L. ; Previtali, B. ; Perreau, P. ; Poiroux, T. ; Faynot, O.

Author_Institution

Leti, CEA, Grenoble, France

fYear

2013

fDate

9-11 Dec. 2013

Abstract

Thanks to a well-controlled CMOS FDSOI technology we have recently been able to demonstrate breakthroughs in the combined use of field effect and Coulomb blockade phenomena. On one hand, we have demonstrated room temperaturehybrid circuits based on single electron transistors and MOSFETs. On the other hand, we have shown the practical performance of electron pumps designed with a single silicided Coulomb island and MOSFETs as tunable barriers for metrologic applications.

Keywords

CMOS integrated circuits; Coulomb blockade; MOSFET; nanowires; silicon-on-insulator; single electron transistors; CMOS FDSOI technology; Coulomb blockade; Coulomb island; FDSOI nanowires; MOSFET; electron pumps; field effect; hybrid circuit; single electron transistors; tunable barriers; CMOS integrated circuits; Fabrication; Logic gates; MOSFET; Nanowires; Single electron transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724697

Filename

6724697

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3089025