Title :
Passivation schemes for copper/polymer thin film interconnections used in multichip modules
Author :
Adema, Gretchen M. ; Hwang, Lih-Tyng ; Rinne, Glenn A. ; Turlik, Iwona
Author_Institution :
MCNC Center for Microelectron., Research Triangle Park, NC, USA
Abstract :
The use of thin inorganic dielectric films as barrier layers between copper and polyimide was examined. Emphasis was placed on discovering the effectiveness of the barrier layers in preventing copper/polyimide interaction and determining its impact on the high-frequency electrical performance of transmission line structures. The integrity of the inorganic dielectric layers as diffusion barriers for the copper was analyzed using transmission electron microscopy. These effects were studied by depositing thin layers of Si3N 4, SiO2, and SiOxNy between chromium/copper/chromium lines and either Dow benzocyclobutene or Dupont 2525 polyimide. Both sputtered Si3N4 and PECVD SiO xNy behaved as diffusion barriers, which resulted in improved performance at very high frequencies over unprotected transmission lines
Keywords :
copper; dielectric thin films; multichip modules; passivation; plasma CVD coatings; polymer films; sputtered coatings; thin film circuits; Cu; Cu-polymer thin film interconnections; Si3N4; SiO2; SiOxNy; barrier layers; benzocyclobutene; high-frequency electrical performance; multichip modules; passivation schemes; plasma enhanced CVD; polyimide; sputtered; thin inorganic dielectric films; transmission electron microscopy; transmission line structures; Chromium; Copper; Dielectric films; Dielectric materials; Frequency; Multichip modules; Passivation; Polyimides; Polymer films; Transmission lines;
Conference_Titel :
Electronic Components and Technology Conference, 1992. Proceedings., 42nd
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0167-6
DOI :
10.1109/ECTC.1992.204293
