High stability fluorinated zinc oxide thin film transistor and its application on high precision active-matrix touch panel

Author

Zhi Ye ; Man Wong ; Man-Tik Ng ; Luo, Jack K.

Author_Institution

Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We present fluorinated ZnO (F-ZnO) TFT to overcome the native drawback of pure ZnO TFT. At a optimum F concentration of ~10²⁰/cm³, it exhibits high field-effect mobility of ~71cm²/Vs, low sub-threshold slope (SS) of 0.18V/decade, high reliability, good uniformity and light insensitivity, The improvement is attributed to the passivation effect of F. Based on the high performance F-ZnO TFTs, a novel active-matrix self-capacitive touch panel was firstly realized. This touch technology combined the functions of high precise stylus handwriting and sensitive multi-touch, which will be the trend of the development of the next-genaration high precision touch panel.

Keywords

II-VI semiconductors; passivation; thin film transistors; touch sensitive screens; zinc compounds; ZnO; active-matrix self-capacitive touch panel; field-effect mobility; fluorinated TFT; fluorinated zinc oxide thin film transistor; high precise stylus handwriting; light insensitivity; passivation effect; touch technology; Conductivity; Films; Passivation; Plasmas; Thin film transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724702

Filename

6724702