Integral heatsink polysilicon semiconductor packaging

Author

McGeary, Michael L.

Author_Institution

Digital Equipment Scotland Ltd., Ayr, UK

fYear

1992

fDate

18-20 May 1992

Firstpage

807

Lastpage

813

Abstract

To evaluate some of the claims made in patent applications, UK 90 14491.6 and US 07/722,741 single-chip and multichip packages were fabricated from polycrystalline silicon (p:Si) with integral, p:Si, cooling fins. By using die-sized pieces of ceramic patterned with a platinum heater (of known temperature coefficient of resistance) data were recorded of heater temperature for a range of input wattages and different cooling conditions. The data are presented as heater temperature (corresponding to device junction temperature) above ambient, against a range of electrical input wattages for seven different package configurations cooled by convection and by forced air. Experimental results indicate that integral heatsink polycrystalline silicon packages for silicon semiconductor devices provide better thermal characteristics than existing ceramic packages

Keywords

cooling; heat sinks; integrated circuit technology; packaging; silicon; convection; cooling conditions; cooling fins; electrical input wattages; forced air; heater temperature; integral heatsink; multichip packages; polycrystalline Si; polysilicon; semiconductor devices; semiconductor packaging; single-chip packages; thermal characteristics; Cooling; Electronic packaging thermal management; Packaging machines; Resistance heating; Semiconductor device packaging; Silicon; Surface resistance; Temperature distribution; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1992. Proceedings., 42nd

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0167-6

Type

conf

DOI

10.1109/ECTC.1992.204299

Filename

204299