Title :
A trench gate photo cell for spectrometric applications
Author :
Kautzsch, Thoralf ; Scire, Alessia ; Voigtlander, Knut
Author_Institution :
Adv. Data Process. GmbH, Infineon Technol. Dresden GmbH, Dresden, Germany
Abstract :
A new trench gate photo cell for spectrometric sensing is demonstrated. By combining a trench structure with a gradually doped base, an electrically tunable device with minimum foot print and excellent spectral resolution is achieved. It offers new opportunities for ambient light recognition of mobile devices and for medical applications.
Keywords :
photodetectors; spectrometers; ambient light recognition; electrically tunable device; medical application; spectrometric applications; spectrometric sensing; trench gate photo cell; trench structure; Charge carriers; Geometry; Image color analysis; Logic gates; Sensors; Silicon; Voltage measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724706
