DocumentCode
3089231
Title
A trench gate photo cell for spectrometric applications
Author
Kautzsch, Thoralf ; Scire, Alessia ; Voigtlander, Knut
Author_Institution
Adv. Data Process. GmbH, Infineon Technol. Dresden GmbH, Dresden, Germany
fYear
2013
fDate
9-11 Dec. 2013
Abstract
A new trench gate photo cell for spectrometric sensing is demonstrated. By combining a trench structure with a gradually doped base, an electrically tunable device with minimum foot print and excellent spectral resolution is achieved. It offers new opportunities for ambient light recognition of mobile devices and for medical applications.
Keywords
photodetectors; spectrometers; ambient light recognition; electrically tunable device; medical application; spectrometric applications; spectrometric sensing; trench gate photo cell; trench structure; Charge carriers; Geometry; Image color analysis; Logic gates; Sensors; Silicon; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724706
Filename
6724706
Link To Document