• DocumentCode
    3089253
  • Title

    High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel FETs with Zn-diffused source junctions

  • Author

    Noguchi, M. ; SangHyeon Kim ; Yokoyama, Masafumi ; SangMin Ji ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Univ. of Tokyo, Tokyo, Japan
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    We have demonstrated the operation of high Ion/Ioff and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions. It has been found that the solid-phase Zn diffusion can form steep-profile and defect-less p+/n source junctions because of the inherent nature of Zn diffusion into InGaAs, which has significantly improved the TFET performance. The present devices have exhibited the record small S.S. of 64 mV/dec and large Ion/Ioff ratio over106 as the planar-type III-V TFETs.
  • Keywords
    III-V semiconductors; diffusion; field effect transistors; gallium arsenide; indium compounds; zinc; InGaAs; TFET performance; Zn; Zn-diffused source junctions; defect-less p+/n source junctions; low subthreshold slope planar-type tunnel FET; planar-type III-V TFET; solid-phase diffusion; steep-profile; Impurities; Indium gallium arsenide; Ion implantation; Junctions; Temperature dependence; Tunneling; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724707
  • Filename
    6724707
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3089253