Title :
Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at V
Author :
Bijesh, R. ; Liu, Hongying ; Madan, Himanshu ; Mohata, D. ; Li, Wenyuan ; Nguyen, N.V. ; Gundlach, David ; Richter, Curt A. ; Maier, Josef ; Wang, Kangping ; Clarke, Tim ; Fastenau, Joel M. ; Loubychev, Dmitri ; Liu, W.K. ; Narayanan, Vijaykrishnan ; Datt
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.
Keywords :
gallium arsenide; indium compounds; microwave field effect transistors; semiconductor device models; tunnel transistors; In0.9Ga0.1As-GaAs0.18Sb0.82; NBTFET; frequency 19 GHz; gigahertz switching performance; high frequency switching characteristics; intrinsic RF transconductance; near broken-gap TFET; record drive current; scaled technology nodes; size 200 nm; vertical architecture; voltage 0.5 V; Capacitance; Frequency measurement; Logic gates; Numerical simulation; Pulse measurements; Radio frequency; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724708
