Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at V

Author

Bijesh, R. ; Liu, Hongying ; Madan, Himanshu ; Mohata, D. ; Li, Wenyuan ; Nguyen, N.V. ; Gundlach, David ; Richter, Curt A. ; Maier, Josef ; Wang, Kangping ; Clarke, Tim ; Fastenau, Joel M. ; Loubychev, Dmitri ; Liu, W.K. ; Narayanan, Vijaykrishnan ; Datt

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We demonstrate high frequency switching characteristics of TFETs based on the In_0.9Ga_0.1As/GaAs_0.18Sb_0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (I_ON) of 740μA/μm, intrinsic RF transconductance (G_M) of 700μS/μm, and a cut-off frequency (F_T) of 19GHz at V_DS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.

Keywords

gallium arsenide; indium compounds; microwave field effect transistors; semiconductor device models; tunnel transistors; In_0.9Ga_0.1As-GaAs_0.18Sb_0.82; NBTFET; frequency 19 GHz; gigahertz switching performance; high frequency switching characteristics; intrinsic RF transconductance; near broken-gap TFET; record drive current; scaled technology nodes; size 200 nm; vertical architecture; voltage 0.5 V; Capacitance; Frequency measurement; Logic gates; Numerical simulation; Pulse measurements; Radio frequency; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724708

Filename

6724708