Title :
Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate
Author :
Then, H.W. ; Dasgupta, S. ; Radosavljevic, Milos ; Chow, L. ; Chu-Kung, B. ; Dewey, G. ; Gardner, Scott ; Gao, X. ; Kavalieros, J. ; Mukherjee, Nandini ; Metz, Markus ; Oliver, Miquel ; Pillarisetty, R. ; Rao, V. ; Sung, S.H. ; Yang, Guo-Min ; Chau, R.
Author_Institution :
Components Res., Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA
Abstract :
GaN is a promising material for LED lighting [1], high voltage power electronics [2] and high power RF applications [3]. GaN HEMT and MOS-HEMT with AlGaN [4] or AlInN [5] polarization layer have been widely studied. In this work we investigate the effects of Al0.83In0.17N polarization layer thickness scaling on the device characteristics of Al0.83In0.17N/AlN/GaN MOS-HEMTs on SiC substrates. We have experimentally observed “negative” capacitance and subthreshold swing (SS) steeper than 40 mV/dec in GaN MOS-HEMTs with thin Al0.83In0.17N polarization layer, where composition modulation of Al% and In% is observed.
Keywords :
III-V semiconductors; MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; Al0.83In0.17N-AlN-GaN; LED lighting; MOS-HEMT; SiC; high voltage power electronics; negative capacitance; polarization layer thickness scaling; subthreshold swing; Capacitance; Gallium nitride; HEMTs; III-V semiconductor materials; Logic gates; MODFETs; Modulation;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724709
