Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate

Author

Then, H.W. ; Dasgupta, S. ; Radosavljevic, Milos ; Chow, L. ; Chu-Kung, B. ; Dewey, G. ; Gardner, Scott ; Gao, X. ; Kavalieros, J. ; Mukherjee, Nandini ; Metz, Markus ; Oliver, Miquel ; Pillarisetty, R. ; Rao, V. ; Sung, S.H. ; Yang, Guo-Min ; Chau, R.

Author_Institution

Components Res., Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA

fYear

2013

fDate

9-11 Dec. 2013

Abstract

GaN is a promising material for LED lighting [1], high voltage power electronics [2] and high power RF applications [3]. GaN HEMT and MOS-HEMT with AlGaN [4] or AlInN [5] polarization layer have been widely studied. In this work we investigate the effects of Al_0.83In_0.17N polarization layer thickness scaling on the device characteristics of Al_0.83In_0.17N/AlN/GaN MOS-HEMTs on SiC substrates. We have experimentally observed “negative” capacitance and subthreshold swing (SS) steeper than 40 mV/dec in GaN MOS-HEMTs with thin Al_0.83In_0.17N polarization layer, where composition modulation of Al% and In% is observed.

Keywords

III-V semiconductors; MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; Al_0.83In_0.17N-AlN-GaN; LED lighting; MOS-HEMT; SiC; high voltage power electronics; negative capacitance; polarization layer thickness scaling; subthreshold swing; Capacitance; Gallium nitride; HEMTs; III-V semiconductor materials; Logic gates; MODFETs; Modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724709

Filename

6724709