More than Moore: III-V devices and Si CMOS get it together

Author

Kazior, Thomas E.

Author_Institution

Raytheon Co., Andover, MA, USA

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We summarize results on the successful integration of III-V electronic devices with Si CMOS on a common silicon substrate using a fabrication process similar to SiGe BiCMOS. The heterogeneous integration of III-V devices with Si CMOS enables a new class of high performance, `digitally assisted´, mixed signal and RF ICs.

Keywords

CMOS integrated circuits; III-V semiconductors; elemental semiconductors; integrated circuit interconnections; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; silicon; III-V electronic devices; RF IC; Si; Si CMOS; SiGe BiCMOS; digitally assisted mixed signal IC; heterogeneous integration; silicon substrate; CMOS integrated circuits; Gallium nitride; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724711

Filename

6724711

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3089317