Title :
More than Moore: III-V devices and Si CMOS get it together
Author :
Kazior, Thomas E.
Author_Institution :
Raytheon Co., Andover, MA, USA
Abstract :
We summarize results on the successful integration of III-V electronic devices with Si CMOS on a common silicon substrate using a fabrication process similar to SiGe BiCMOS. The heterogeneous integration of III-V devices with Si CMOS enables a new class of high performance, `digitally assisted´, mixed signal and RF ICs.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; integrated circuit interconnections; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; silicon; III-V electronic devices; RF IC; Si; Si CMOS; SiGe BiCMOS; digitally assisted mixed signal IC; heterogeneous integration; silicon substrate; CMOS integrated circuits; Gallium nitride; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724711
