Title :
Depletion-mode Ga2O3 MOSFETs on β-Ga2O3 (010) substrates with Si-ion-implanted channel and contacts
Author :
Higashiwaki, Masataka ; Sasaki, Kazuhiko ; Man Hoi Wong ; Kamimura, Taeko ; Krishnamurthy, Dheepak ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
Abstract :
Depletion-mode Ga2O3 MOSFETs were fabricated on single-crystal β-Ga2O3 (010) substrates. We applied Si-ion implantation to the ohmic contacts for low contact resistance as well as to the channel layer for reliable doping. An Al2O3 gate dielectric film formed by atomic layer deposition passivated the device surface and significantly reduced gate leakage. The MOSFETs with a simple structure exhibited complete channel pinch-off with a breakdown voltage of 415 V and a drain current on/off ratio of ten orders of magnitude at room temperature. The devices also showed stable operation up to 250°C.
Keywords :
MOSFET; aluminium compounds; atomic layer deposition; contact resistance; elemental semiconductors; gallium compounds; ion implantation; ohmic contacts; passivation; silicon; Al2O3; Ga2O3; Si; atomic layer deposition; channel layer; channel pinch off; depletion mode MOSFET; device surface; gate dielectric film; ion implanted channel; low contact resistance; ohmic contacts; reduced gate leakage; reliable doping; single crystal substrates; voltage 415 V; Crystals; MOSFET; Molecular beam epitaxial growth; Silicon; Substrates; Temperature; Temperature measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724713
