• DocumentCode
    3089424
  • Title

    Novel implantation process of carbon nanotubes for plugs and vias, and their integration with transferred multilayer graphene wires

  • Author

    Sato, Mitsuhisa ; Takahashi, Masaharu ; Nihei, Mizuhisa ; Sato, Seiki ; Yokoyama, Naoki

  • Author_Institution
    Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    We have developed a novel process, the implantation of carbon nanotubes (CNTs) into holes like plugs, vias, and through-silicon vias (TSVs) for the first time. The developed low-temperature process is suitable for back-end-of-line (BEOL) processes of LSI. With this approach, we can use high-quality CNTs grown at high temperature on a different substrate and densify CNTs. Consequently, the implanted CNT plugs had a resistance one order of magnitude lower than the directly grown CNT plugs. In addition, we successfully integrated the implanted CNT plug with transferred multilayer graphene (MLG) wires for all carbon interconnects.
  • Keywords
    carbon nanotubes; graphene; integrated circuit interconnections; ion implantation; large scale integration; low-temperature techniques; three-dimensional integrated circuits; vias; wires (electric); BEOL; C; CNT plugs; LSI; MLG wires; TSVs; back-end-of-line processes; carbon interconnects; carbon nanotubes; high-quality CNTs; holes; implantation process; low-temperature process; through-silicon vias; transferred multilayer graphene wires; Electrodes; Films; Gold; Plugs; Resistance; Substrates; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724716
  • Filename
    6724716