DocumentCode
3089424
Title
Novel implantation process of carbon nanotubes for plugs and vias, and their integration with transferred multilayer graphene wires
Author
Sato, Mitsuhisa ; Takahashi, Masaharu ; Nihei, Mizuhisa ; Sato, Seiki ; Yokoyama, Naoki
Author_Institution
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2013
fDate
9-11 Dec. 2013
Abstract
We have developed a novel process, the implantation of carbon nanotubes (CNTs) into holes like plugs, vias, and through-silicon vias (TSVs) for the first time. The developed low-temperature process is suitable for back-end-of-line (BEOL) processes of LSI. With this approach, we can use high-quality CNTs grown at high temperature on a different substrate and densify CNTs. Consequently, the implanted CNT plugs had a resistance one order of magnitude lower than the directly grown CNT plugs. In addition, we successfully integrated the implanted CNT plug with transferred multilayer graphene (MLG) wires for all carbon interconnects.
Keywords
carbon nanotubes; graphene; integrated circuit interconnections; ion implantation; large scale integration; low-temperature techniques; three-dimensional integrated circuits; vias; wires (electric); BEOL; C; CNT plugs; LSI; MLG wires; TSVs; back-end-of-line processes; carbon interconnects; carbon nanotubes; high-quality CNTs; holes; implantation process; low-temperature process; through-silicon vias; transferred multilayer graphene wires; Electrodes; Films; Gold; Plugs; Resistance; Substrates; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724716
Filename
6724716
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