Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al2O3/CuTeGe conductive bridge RAM (CBRAM)

Author

Guy, J. ; Molas, G. ; Vianello, E. ; Longnos, F. ; Blanc, Sara ; Carabasse, C. ; Bernard, M. ; Nodin, J.F. ; Toffoli, A. ; Cluzel, Jacques ; Blaise, P. ; Dorion, P. ; Cueto, O. ; Grampeix, H. ; Souchier, E. ; Cabout, Thomas ; Brianceau, P. ; Balan, Viorel

Author_Institution

LETI, CEA, Grenoble, France

fYear

2013

fDate

9-11 Dec. 2013

Abstract

In this work, we present an experimental and theoretical analysis of scaled (down to 10nm) Al₂O₃/CuTeGe based CBRAM. We focus on the understanding of the physical mechanisms responsible for the failure of high and low resistance states at high temperature. Using a numerical model combined with ab-initio calculations, we elucidate for the 1^st time at our knowledge the role of the filament morphology on the resistance instability. We demonstrate that an optimized filament shape (tuned by adjusting the operating conditions) significantly improves the memory window stability at high temperatures.

Keywords

aluminium compounds; circuit stability; copper compounds; nanoelectronics; random-access storage; tellurium compounds; Al₂O₃-CuTeGe; CBRAM; data retention; filament morphology; high resistance state stability; low resistance state stability; memory window stability; nanotrench conductive bridge RAM; numerical model; optimized filament shape; resistance instability; size 10 nm; Aluminum oxide; Electrodes; Morphology; Random access memory; Resistance; Stability analysis; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724722

Filename

6724722