Title :
Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations
Author :
Ohyanagi, T. ; Takaura, N. ; Tai, M. ; Kitamura, Masayuki ; Kinoshita, Moto ; Akita, K. ; Morikawa, T. ; Kato, Shigeo ; Araidai, M. ; Kamiya, K. ; Yamamoto, Takayuki ; Shiraishi, Kotaro
Author_Institution :
Low-power Electron. Assoc. & Project, Tsukuba, Japan
Abstract :
We developed a high quality charge-injection GeTe/Sb2Te3 superlattice phase change memory. A RESET-current of 70 μA and a SET-speed of 10 ns, the fastest ever reported, were obtained. Transmission electron microscopy analysis showed that the superlattice structure was maintained after 1 million (M) endurance. Even 100 M cycle endurance was possible, and these results conclusively proved non-melting resistive switching.
Keywords :
antimony compounds; charge injection; germanium compounds; phase change memories; superlattices; transmission electron microscopy; GeTe-Sb2Te3; charge injection phase change memory; charge injection superlattice phase change memory; current 70 muA; high quality superlattice; nonmelting resistive switching; time 10 ns; transmission electron microscopy; Electrical resistance measurement; Films; Metals; Phase change materials; Resistance; Superlattices; X-ray scattering;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724725
