Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations

Author

Ohyanagi, T. ; Takaura, N. ; Tai, M. ; Kitamura, Masayuki ; Kinoshita, Moto ; Akita, K. ; Morikawa, T. ; Kato, Shigeo ; Araidai, M. ; Kamiya, K. ; Yamamoto, Takayuki ; Shiraishi, Kotaro

Author_Institution

Low-power Electron. Assoc. & Project, Tsukuba, Japan

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We developed a high quality charge-injection GeTe/Sb₂Te₃ superlattice phase change memory. A RESET-current of 70 μA and a SET-speed of 10 ns, the fastest ever reported, were obtained. Transmission electron microscopy analysis showed that the superlattice structure was maintained after 1 million (M) endurance. Even 100 M cycle endurance was possible, and these results conclusively proved non-melting resistive switching.

Keywords

antimony compounds; charge injection; germanium compounds; phase change memories; superlattices; transmission electron microscopy; GeTe-Sb₂Te₃; charge injection phase change memory; charge injection superlattice phase change memory; current 70 muA; high quality superlattice; nonmelting resistive switching; time 10 ns; transmission electron microscopy; Electrical resistance measurement; Films; Metals; Phase change materials; Resistance; Superlattices; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724725

Filename

6724725