The Numerical Modeling for Electrical Behavior of Graphene Nanoribbon in the Present of Optical Detection

Author

Sheikhi, M.H. ; Berahman, M. ; Alaei, R.

Author_Institution

Nanotechnol. Res. Inst., Shiraz Univ., Shiraz, Iran

Volume

2

fYear

2009

fDate

28-30 Dec. 2009

Firstpage

20

Lastpage

22

Abstract

A physical model is presented for GNR based photo detector. The photo detector structure is photodiode in which GNR is inserted between two electrodes as a tool for changing pick frequency of absorption. Optical properties of GNR discussed using tight-binding approximation and DOS coupled with conductivity. Our calculations have shown that GNR based photo detectors have better characteristics than semiconductor devices and they have appropriate characteristic for communication applications.

Keywords

graphene; optical conductivity; photodetectors; photodiodes; tight-binding calculations; electrical behavior; graphene nanoribbon; optical detection; photo detector structure; photodiode; system DOS; tight-binding approximation; Absorption; Atomic layer deposition; Conductivity; Finite impulse response filter; Infrared detectors; Nanoscale devices; Numerical models; Optical computing; Optical detectors; Wave functions; Graphene Nanoribbon; Optical Detection; Optical properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Electrical Engineering, 2009. ICCEE '09. Second International Conference on

Conference_Location

Dubai

Print_ISBN

978-1-4244-5365-8

Electronic_ISBN

978-0-7695-3925-6

Type

conf

DOI

10.1109/ICCEE.2009.220

Filename

5380152