Title :
Zero-defect sputter deposition metallization method for high-volume manufacturing of grafted multilayer thin film modules
Author_Institution :
Motorola Inc., Ft. Lauderdale, FL, USA
Abstract :
The implementation of constant-power power supplies communicating with a magnet control system has been demonstrated to be an optimum way to uniformly deposit metal from an inline sputter system. This is an inline DC magnetron sputter deposition process. High equipment reliability (>99% uptime), low defect levels (<4 p.p.m.), and the use of 12-mm-thick targets for metallizing 3000 ft2 of substrate area between cathode changes have been achieved. The system is configured to provide layered metal systems with discrete or phased interfaces. Plasma optimization via real-time magnetron control and magnetic field suppression at the beginning of the target life has enabled deposit thickness (and sheet resistivity) variation to be automatically controlled to ±5% over the 435-in2 deposition area throughout the life of the targets
Keywords :
integrated circuit manufacture; metallisation; multichip modules; process control; sputter deposition; substrates; constant-power power supplies; discrete interfaces; grafted multilayer thin film modules; high-volume manufacturing; inline DC magnetron sputter deposition process; layered metal systems; low defect levels; magnet control system; magnetic field suppression; phased interfaces; plasma optimisation; real-time magnetron control; sputter deposition metallization method; zero defect; Automatic control; Cathodes; Control systems; Magnetic fields; Metallization; Plasmas; Power supplies; Power system reliability; Sputtering; Thickness control;
Conference_Titel :
Electronic Components and Technology Conference, 1992. Proceedings., 42nd
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0167-6
DOI :
10.1109/ECTC.1992.204337