Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor

Author

Tang, W.M. ; Leung, C.H. ; Lai, P.T.

Author_Institution

Univ. of Hong Kong, Hong Kong

fYear

2008

fDate

23-25 Jan. 2008

Firstpage

171

Lastpage

174

Abstract

Silicon dioxide deposited by RF sputtering is used as the gate insulator of Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are fabricated for investigation. Their hydrogen-sensing properties are compared with each other by taking measurements at various temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that the sensitivity of the devices is strongly related to the thickness of the insulator, and the thicker the insulator, the higher is the sensitivity.

Keywords

MIS devices; Schottky diodes; gas sensors; silicon compounds; MISiC Schottky-diode hydrogen sensor; Metal-Insulator-SiC; computer-controlled measurement system; gate insulator; insulator thickness; sensing property; silicon compounds; Dielectrics and electrical insulation; Fabrication; Gas detectors; Hydrogen; Plasma temperature; Silicon carbide; Silicon compounds; Sputtering; Temperature measurement; Temperature sensors; Hydrogen sensor; SiO2; silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Design, Test and Applications, 2008. DELTA 2008. 4th IEEE International Symposium on

Conference_Location

Hong Kong

Print_ISBN

978-0-7695-3110-6

Type

conf

DOI

10.1109/DELTA.2008.28

Filename

4459534