A 2 V 2.4 GHz fully integrated CMOS LNA

Author

Huang, J.C. ; Weng, Ro-Min ; Chang, Cheng-Chih ; Hsu, Kang ; Lin, Kw-YL

Author_Institution

Dept. of Electr. Eng., Nat. Dong Hwa Univ, Hualien, Taiwan

Volume

4

fYear

2001

fDate

6-9 May 2001

Firstpage

466

Abstract

A fully integrated 2 V 2.4 GHz ISM (Industrial Scientific and Medical) frequency band LNA (Low Noise amplifier) is proposed. The LNA is designed with 0.3 μm process. The noise figure including the resistance of inductors has been considered. An inductor is added between the MOS of cascode circuits to improve the matching and increase power gain. With a 2 V supply, the LNA achieves a power gain (S21) of 19.9 dB, noise figure of 2.5 dB, and power dissipation 14.7 mW. Also, the input third-order intercept point (IIP3) is 2 dBm, and an input 1-dB compression point (P_{1 dB}) is -12 dBm. The reverse isolation is -47.8 dB

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; low-power electronics; wireless LAN; 0.35 micron; 14.7 mW; 19.9 dB; 2 V; 2.4 GHz; 2.5 dB; CMOS LNA; ISM; input 1-dB compression point; input third-order intercept point; noise figure; power dissipation; power gain; reverse isolation; Circuit noise; Immune system; Inductors; Low-noise amplifiers; Noise figure; Parasitic capacitance; Process design; Q factor; Radio frequency; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.922274

Filename

922274