Effect of Implantation Defects and Carbon Incorporation on Si/SiGe Bipolar Characteristics

Incorporation of carbon in SiGe has attracted great interest, which makes SiGeC based heterojunction transistors as an attractive device for high frequency applications. Carbon addition in SiGe dramatically reduces out-diffusion of boron caused by excess of interstitials generated by extrinsic base implantation. However carbon incorporation negatively influences the electrical device characteristics. In this paper we investigate active implantation defects, the aim was to the specify space localization and parasitic effects of this ones. Second, we investigate the impact of carbon content on the electrical characteristics of device, the results show that indeed C contents ¿ 1% severely degrade transistor performances.