Multiple peak resonant tunneling diode for multi-valued memory

Author

Wei, Sen-Jung ; Lin, Hung Chang

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1991

fDate

26-29 May 1991

Firstpage

190

Lastpage

195

Abstract

Several designs for a high-speed static random access multivalued memory using the folding characteristics of multiple peak resonant tunneling diodes (RTDs) are presented. The different designs are described and studied by comparing their power consumption under different conditions of device parameters and the switching speed. It is shown that the proposed memory cell using a pair of multiple-peak RTDs yields the best result from the standpoint of size, power dissipation, and speed

Keywords

SRAM chips; many-valued logics; resonant tunnelling devices; tunnel diodes; device parameters; folding characteristics; high-speed static random access multivalued memory; memory cell; multi-valued memory; multiple peak resonant tunneling diodes; multiple-peak RTDs; power consumption; power dissipation; switching speed; Diodes; Educational institutions; Energy consumption; Integrated circuit interconnections; Multivalued logic; Power dissipation; Power system interconnection; Resistors; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Multiple-Valued Logic, 1991., Proceedings of the Twenty-First International Symposium on

Conference_Location

Victoria, BC

Print_ISBN

0-8186-2145-1

Type

conf

DOI

10.1109/ISMVL.1991.130728

Filename

130728

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3091506