Title :
40 Gb/s analog IC chipset for optical receiver using SiGe HBTs
Author :
Masuda, T. ; Ohhata, Kenichi ; Oda, K. ; Tanabe, M. ; Shimamoto, H. ; Onai, T. ; Washio, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Japan
Abstract :
A preamplifier with 35 GHz bandwidth and 48.7 dB/spl Omega/ transimpedance gain, an automatic-gain-control (AGC) amplifier core with 31 GHz bandwidth, and a 40 Gb/s decision circuit are presented for future optical-transmission systems at a data rate of 40 Gb/s in global communication systems. A self-aligned selective-epitaxial SiGe-base heterojunction bipolar transistor is used to implement these circuits. This analog IC chipset meets the requirements for a 40 Gb/s optical receiver.
Keywords :
Ge-Si alloys; 31 GHz; 35 GHz; 40 Gbit/s; AGC amplifier core; SiGe; SiGe HBTs; analog IC chipset; automatic gain control; decision circuit; heterojunction bipolar transistor; optical receiver; optical-transmission systems; preamplifier; selective-epitaxial SiGe-base HBT; self-aligned HBT; Analog integrated circuits; Bandwidth; Germanium silicon alloys; Optical amplifiers; Optical receivers; Photonic integrated circuits; Preamplifiers; Semiconductor optical amplifiers; Silicon germanium; Stimulated emission;
Conference_Titel :
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4344-1
DOI :
10.1109/ISSCC.1998.672482
