The evolution of the MOS and Bipolar Gate Thyristor

The MOS and Bipolar Gate Thyristor is a new power semiconductor device which combines the advantages of a latched on-state with unlatched switching. Conceptually, the MBGT is a derivative of the GTO. This contrasts with the approach of many designs which have evolved from the MCT. Rather than incorporate the intrinsic limitations of the MCT, the MBGT builds on the success of the GTO. This paper charts the development of the MBGT, outlining the limitations of existing thyristors and detailing the advantages of employing both a MOS and a bipolar gate. The validity of the MBGT concept is demonstrated by experimental results